| PART |
Description |
Maker |
| M29W320EB70N1 M29W320EB70N1E M29W320EB90N6T M29W32 |
32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory
32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory 32兆位Mb的x8或功能的2Mb x16插槽，引导块V电源快闪记忆
|
STMicroelectronics N.V.
ST Microelectronics
|
| M29W160 M29W160BB M29W160BB120N1T M29W160BT120M6T |
16 Mbit 2Mb x8 or 1Mb x16 / Boot Block Low Voltage Single Supply Flash Memory
16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory 16兆位Mb x8兆x16插槽，引导块低压单电源闪
|
ST Microelectronics
IXYS, Corp.
STMicroelectronics N.V.
|
| M29DW324DT M29DW324DB 8730 M29DW324DT90ZE6T M29DW3 |
32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory
From old datasheet system
32 MBIT (4MB X8 OR 2MB X16, DUAL BANK 16:16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
|
STMICROELECTRONICS[STMicroelectronics]
|
| M28W320BB M28W320BB100N1T M28W320BB100N6T M28W320B |
32 Mbit (2Mb x16/ Boot Block) 3V Supply Flash Memory
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| M29W320E M29W320EB70N1 M29W320ET70N1 M29W320ET90ZE |
32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| M29DW324DT |
32 MBIT (4MB X8 OR 2MB X16, DUAL BANK, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
|
ST Microelectronics
|
| M29DW323DB70N1 M29DW323DB70N1E M29DW323DB70N1F M29 |
32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory
|
Numonyx B.V
|
| M29W160 M29W160BB M29W160BB120M1T M29W160BB120M6T |
16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M28W320FST70ZA6E M28W320FST70ZA1 M28W320FST70ZA1E |
32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| M28W320BB 7584 M28W320BB100N6T M28W320BB100ZB1T M2 |
Quadruple ESD transient voltage suppressor - Cd max.: 240 pF; IRM max: 2A; Number of protected lines: 4 ; PPP max: 0 W; VBR typ.: 5.6 V; VRWM: 3 V
Quadruple ESD transient voltage suppressor - Cd max.: 48 pF; IRM max: 0.1A; Number of protected lines: 4 ; PPP max: 0 W; VBR typ.: 20 V; VRWM: 15 V
CLAMP
32 Mbit (2Mb x16/ Boot Block) 3V Supply Flash Memory
From old datasheet system
32 MBIT (2MB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
|
意法半导
STMicroelectronics
|
| M36W216TI-ZAT M36W216BIZA M36W216TIZA M36W216TI70Z |
16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product 16兆x16插槽，开机区块快闪记忆体兆位128KB的x16的SRAM，多个存储产
16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product 16兆x16插槽，开机区块快闪记忆体2兆位128KB的x16的SRAM，多个存储产
PV76L14-18P
|
http://
STMicroelectronics N.V.
意法半导
|
